تلوريد البزموت

(تم التحويل من Bismuth telluride)
تلوريد البزموت
Монокристалл теллурида висмута.jpg
Single crystal of bismuth telluride
Bi2Te3 structure 2.png
Atomic structure: ideal (l) and with a twin defect (r)
Twin in Bi2Te3 3.jpg
Electron micrograph of twinned bismuth telluride
المُعرِّفات
رقم CAS
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.013.760 Edit this at Wikidata
رقم EC
  • 215-135-2
UNII
الخصائص
الصيغة الجزيئية Bi2Te3
كتلة مولية 800.76 g mol-1
المظهر Grey powder or metallic grey crystals
الكثافة 7.74 g/cm3[1]
نقطة الانصهار
قابلية الذوبان في الماء insoluble[1]
قابلية الذوبان في ethanol soluble[1]
البنية
البنية البلورية Trigonal, hR15
الزمرة الفراغية R3m, No. 166[2]
ثابت العقد a = 0.4395 nm, c = 3.044 nm
المخاطر
صفحة بيانات السلامة Sigma-Aldrich
NFPA 704 (معيـَّن النار)
Flammability code 0: لن يشتعل. مثل الماءHealth code 2: التعرض الشديد أو المتواصل ولكن ليس بمزمن قد يتسبب في عجز مؤقت أو جرح بُحتمل بقاؤه. مثل الكلوروفورمReactivity code 0: مستقر في العادة، حتى تحت ظروف التعرض للنار، ولا يتفاعل مع الماء. مثل النيتروجين السائلSpecial hazards (white): no codeNFPA 704 four-colored diamond
0
2
0
نقطة الوميض noncombustible [3]
حدود التعرض الصحية بالولايات المتحدة (NIOSH):
PEL (المسموح)
 TWA 15 mg/m3 (total) TWA 5 mg/m3 (resp) (pure)
none (doped with selenium sulfide) [3]
REL (الموصى به)
 TWA 10 mg/m3 (total) TWA 5 mg/m3 (resp) (pure) TWA 5 mg/m3 (doped with selenium sulfide)[3]
IDLH (خطر عاجل)
 N.D. (pure and doped)[3]
مركبات ذا علاقة
Arsenic telluride
Antimony telluride
ما لم يُذكر غير ذلك، البيانات المعطاة للمواد في حالاتهم العيارية (عند 25 °س [77 °ف]، 100 kPa).
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مراجع الجدول

Bismuth telluride (Bi
2Te
3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor, which, when alloyed with antimony or selenium, is an efficient thermoelectric material for refrigeration or portable power generation. Bi
2Te
3 is a topological insulator, and thus exhibits thickness-dependent physical properties.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Properties as a thermoelectric material

Bismuth telluride is a narrow-gap layered semiconductor with a trigonal unit cell. The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.[4] Bi
2Te
3 cleaves easily along the trigonal axis due to Van der Waals bonding between neighboring tellurium atoms. Due to this, bismuth-telluride-based materials used for power generation or cooling applications must be polycrystalline. Furthermore, the Seebeck coefficient of bulk Bi
2Te
3 becomes compensated around room temperature, forcing the materials used in power-generation devices to be an alloy of bismuth, antimony, tellurium, and selenium.[5]

Recently, researchers have attempted to improve the efficiency of Bi
2Te
3-based materials by creating structures where one or more dimensions are reduced, such as nanowires or thin films. In one such instance n-type bismuth telluride was shown to have an improved Seebeck coefficient (voltage per unit temperature difference) of −287 μV/K at 54 °C,[6] However, one must realize that Seebeck coefficient and electrical conductivity have a tradeoff: a higher Seebeck coefficient results in decreased carrier concentration and decreased electrical conductivity.[7]

In another case, researchers report that bismuth telluride has high electrical conductivity of 1.1×105 S·m/m2 with its very low lattice thermal conductivity of 1.20 W/(m·K), similar to ordinary glass.[8]


Properties as a topological insulator

Bismuth telluride is a well-studied topological insulator. Its physical properties have been shown to change at highly reduced thicknesses, when its conducting surface states are exposed and isolated. These thin samples are obtained through either epitaxy or mechanical exfoliation.

Epitaxial growth methods such as molecular beam epitaxy and metal organic chemical vapor deposition are common methods of obtaining thin Bi
2Te
3 samples. The stoichiometry of samples obtained through such techniques can vary greatly between experiments, so Raman spectroscopy is often used to determine relative purity. However, thin Bi
2Te
3 samples are resistant to Raman spectroscopy due to their low melting point and poor heat dispersion.[9]

The crystalline structure of Bi
2Te
3 allows for mechanical exfoliation of thin samples by cleaving along the trigonal axis. This process is significantly lower in yield than epitaxial growth, but produces samples without defects or impurities. Similar to extracting graphene from bulk graphite samples, this is done by applying and removing adhesive tape from successively thinner samples. This procedure has been used to obtain Bi
2Te
3 flakes with a thickness of 1 nm.[10] However, this process can leave significant amounts of adhesive residue on a standard Si/SiO2 substrate, which in turn obscure atomic force microscopy measurements and inhibit the placement of contacts on the substrate for purposes of testing. Common cleaning techniques such as oxygen plasma, boiling acetone and isopropyl alcohol are ineffective in removing residue.[11]

Occurrence and preparation

The mineral form of Bi
2Te
3 is tellurobismuthite which is moderately rare.[12][13] There are many natural bismuth tellurides of different stoichiometry, as well as compounds of the Bi-Te-S-(Se) system, like Bi
2Te
2S (tetradymite). These bismuth tellurides are part of the tetradymite group of minerals.[14]

Bismuth telluride may be prepared simply by sealing mixed powders of bismuth and tellurium metal in a quartz tube under vacuum (critical, as an unsealed or leaking sample may explode in a furnace) and heating it to 800 °C in a muffle furnace.

See also

References

  1. ^ أ ب ت خطأ استشهاد: وسم <ref> غير صحيح؛ لا نص تم توفيره للمراجع المسماة b92
  2. ^ Feutelais, Y.; Legendre, B.; Rodier, N.; Agafonov, V. (1993). "A study of the phases in the bismuth – tellurium system". Materials Research Bulletin. 28 (6): 591. doi:10.1016/0025-5408(93)90055-I.
  3. ^ أ ب ت ث NIOSH Pocket Guide to Chemical Hazards 0056
  4. ^ Caywood, L. P.; Miller, G. (1970). "Anisotropy of the constant energy surfaces in p-type Bi2Te3 and Bi2Se3 from galvanomagnetic coefficients". Phys. Rev. B. 2 (8): 3209. Bibcode:1970PhRvB...2.3209C. doi:10.1103/PhysRevB.2.3209.
  5. ^ Satterthwaite, C. B.; Ure, R. (1957). "Electrical and Thermal Properties of Bi2Te3". Phys. Rev. 108 (5): 1164. Bibcode:1957PhRv..108.1164S. doi:10.1103/PhysRev.108.1164.
  6. ^ Tan, J. (2005). "Thermoelectric properties of bismuth telluride thin films deposited by radio frequency magnetron sputtering". In Cane, Carles; Chiao, Jung-Chih; Vidal Verdu, Fernando (eds.). Smart Sensors, Actuators, and MEMS II. Vol. 5836. pp. 711–718. Bibcode:2005SPIE.5836..711T. doi:10.1117/12.609819. S2CID 123199126. {{cite book}}: |journal= ignored (help)
  7. ^ Goldsmid, H. J.; Sheard, A. R. & Wright, D. A. (1958). "The performance of bismuth telluride thermojunctions". Br. J. Appl. Phys. 9 (9): 365. Bibcode:1958BJAP....9..365G. doi:10.1088/0508-3443/9/9/306.
  8. ^ Takeiishi, M.; et al. "Thermal conductivity measurements of Bismuth Telluride thin films by using the 3 Omega method" (PDF). The 27th Japan Symposium on Thermophysical Properties, 2006, Kyoto. Archived from the original (PDF) on 2007-06-28. Retrieved 2009-06-06.
  9. ^ Teweldebrhan, D.; Goyal, V.; Balandin, A. A (2010). "From Graphene to Bismuth Telluride: Mechanical Exfoliation of Quasi-2D Crystals for Applications in Thermoelectrics and Topological Insulators". Nano Letters. 10 (12): 1209–18. Bibcode:2010NanoL..10.1209T. doi:10.1021/nl903590b. PMID 20205455.
  10. ^ Teweldebrhan, Desalegne; Balandin, Alexander A. (2010). ""Graphene-Like" Exfoliation of Atomically-Thin Films of Bi". ECS Transactions: 103–117. doi:10.1149/1.3485611. S2CID 139017503.
  11. ^ Childres, Isaac; Tian, Jifa; Miotkowski, Ireneusz; Chen, Yong (2013). "AFM and Raman studies of topological insulator materials subject to argon plasma etching". Philosophical Magazine. 93 (6): 681–689. arXiv:1209.2919. Bibcode:2013PMag...93..681C. doi:10.1080/14786435.2012.728009. S2CID 38149843.
  12. ^ "Tellurobismuthite". Mindat.org. Retrieved November 28, 2023.
  13. ^ Kingsbury, A.W.G. (1965). "Tellurbismuth and meneghinite, two minerals new to Britain". Mineralogical Magazine and Journal of the Mineralogical Society (in الإنجليزية). 35 (270): 424–426. Bibcode:1965MinM...35..424K. doi:10.1180/minmag.1965.035.270.19. ISSN 0369-0148.
  14. ^ "Tetradymite Group". Mindat.org. Retrieved November 28, 2023.

External links

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